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| DSEC 60-02A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x30 A VRRM = 200 V trr = 25 ns A VRSM V 200 VRRM V 200 Type A C TO-247 AD DSEC 60-02A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md FC Weight Conditions TC = 145C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 325 1.2 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm N g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch TC = 25C mounting torque mounting force with clip typical 165 0.8...1.2 20...120 6 Symbol IR Conditions VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 150C IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 10 200 0.95 1.20 0.9 0.25 A A V V K/W K/W ns 4 A VF RthJC RthCH trr IRM IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s; TVJ = 100C 25 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 502 DSEC 60-02A A 60 IF 40 TVJ = 150C TVJ = 100C TVJ = 25C 500 nC 400 IRM Qr 300 IF = 60 A IF = 30 A IF = 15 A 200 TVJ = 100C VR = 100 V 25 A 20 TVJ = 100C VR = 100 V IF = 60 A 15 IF = 30 A IF = 15 A 10 20 100 5 0 0.0 0.5 1.0 VF V 1.5 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig.1 Forward current IF vs. forward voltage drop VF 1.8 1.6 1.4 Kf 1.2 1.0 0.8 IRM 0.6 0.4 0.2 0 40 80 120 C 160 TVJ Qr 20 30 40 60 ns trr 50 Fig.2 Reverse recovery charge Qrr versus -diF/dt 16 TVJ = 100C VR = 100 V V 14 VFR 12 10 IF = 60A IF = 30A IF = 15A 8 6 Fig.3 Peak reverse current IRM versus -diF/d 3.8 TVJ = 100C VR = 100 V IF = 30 A s 3.7 3.6 3.5 3.4 3.3 VFR 4 3.2 600 A/s 1000 800 diF/dt tfr tfr 0 200 400 600 -diF/dt 800 A/s 1000 0 200 400 Fig.4 Dynamic parameters Qrr; IRM versus Tvj 30 J 25 20 Erec 15 10 0.001 5 0 0 200 400 600 A/s 1000 800 -diF/dt TVJ = 100C VR = 100 V IF = 30 A 1 K/W 0.1 ZthJC 0.01 Fig.5 Reverse recovery time trr versus -diF/dt NOTE: Fig. 2 to Fig. 6 shows typical values Fig.6 Peak forward voltage VFR & forw. recov. time tfr vs. -diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.005 0.0003 0.04 DSEC 60-02A 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Recovery energy Erec versus -diF/dt Fig.8 Transient thermal resistance junction to case 502 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2005 IXYS All rights reserved 2-2 |
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